Optical properties of InGaN-based red multiple quantum wells

In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode structures. The optical properties two MQW structures with different n-GaN underlayer thicknesses (4 and 8 μm) are studied compared. results photoluminescence studies show that a thicker layer is beneficial for obtaining higher content MQWs. However, sample has poorer internal quantum efficiency, larger full width at half maximum, shorter nonradiative recombination time, implying there stronger In-content fluctuations more defects. Furthermore, MQWs shown to exhibit deep localized states. Our findings imply in order achieve high-efficiency InGaN emission, enhancing uniformity distribution active region decreasing centers critical challenges.